Infrared Absorption Spectrum of Boron Carbide

Boron carbide/n-silicon carbide heterojunction diodes

Infrared absorption spectrum of carbon disulfide.

The infrared absorption spectrum of carbon disulfide has been remeasured in the region from 2 to 24 I' with cells up to 5 mm in t hickness. Fifteen bands were observed , some however being of low intensity. The strongest band for the liquid occurs at 6.621' , and t he second harmonic of this band was observed at 2.22 1' , but t he first harm onic, which should be at about 3.33 1' , was not obse...

Shock-wave strength properties of boron carbide and silicon carbide

Magnetoresistance in boron carbide junctions

Ni doping of semiconducting boron carbide